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TK35A08N1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK35A08N1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0122 Ohm
   Paquete / Cubierta: TO-220SIS
     - Selección de transistores por parámetros

 

TK35A08N1 Datasheet (PDF)

 ..1. Size:232K  toshiba
 tk35a08n1.pdf pdf_icon

TK35A08N1

TK35A08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK35A08N1TK35A08N1TK35A08N1TK35A08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 10.0 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enha

 ..2. Size:252K  inchange semiconductor
 tk35a08n1.pdf pdf_icon

TK35A08N1

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK35A08N1ITK35A08N1FEATURESLow drain-source on-resistance:RDS(ON) = 12.0m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX

 9.1. Size:237K  toshiba
 tk35a65w.pdf pdf_icon

TK35A08N1

TK35A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK35A65WTK35A65WTK35A65WTK35A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.068 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enh

 9.2. Size:240K  toshiba
 tk35a65w5.pdf pdf_icon

TK35A08N1

TK35A65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK35A65W5TK35A65W5TK35A65W5TK35A65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 130 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.08 (typ.) by using Super Junction Struc

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FTK3857L | FDMS3660AS | KRF7343 | NCEP0135AF | UT20N03 | S68N08ZRN | WPM4801

 

 
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