TK35A08N1. Аналоги и основные параметры
Наименование производителя: TK35A08N1
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 440 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0122 Ohm
Тип корпуса: TO-220SIS
Аналог (замена) для TK35A08N1
- подборⓘ MOSFET транзистора по параметрам
TK35A08N1 даташит
tk35a08n1.pdf
TK35A08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK35A08N1 TK35A08N1 TK35A08N1 TK35A08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 10.0 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enha
tk35a08n1.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK35A08N1 ITK35A08N1 FEATURES Low drain-source on-resistance RDS(ON) = 12.0m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAX
tk35a65w.pdf
TK35A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK35A65W TK35A65W TK35A65W TK35A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.068 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enh
tk35a65w5.pdf
TK35A65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK35A65W5 TK35A65W5 TK35A65W5 TK35A65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 130 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.08 (typ.) by using Super Junction Struc
Другие MOSFET... TK31V60W , TK31V60W5 , TK31V60X , TK32A12N1 , TK32E12N1 , TK33S10N1Z , TK34A10N1 , TK34E10N1 , 60N06 , TK35A65W , TK35A65W5 , TK35E08N1 , TK35N65W , TK35N65W5 , TK39A60W , TK39J60W , TK39J60W5 .
History: IRFU1N60APBF
History: IRFU1N60APBF
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