TK35A65W5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK35A65W5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 55 nS
Cossⓘ - Capacitancia de salida: 90 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
Encapsulados: TO-220SIS
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TK35A65W5 datasheet
tk35a65w5.pdf
TK35A65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK35A65W5 TK35A65W5 TK35A65W5 TK35A65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 130 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.08 (typ.) by using Super Junction Struc
tk35a65w5.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK35A65W5 ITK35A65W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.08 (typ.) Enhancement mode Vth = 3 to 4.5V (VDS = 10 V, ID=2.1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING
tk35a65w.pdf
TK35A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK35A65W TK35A65W TK35A65W TK35A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.068 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enh
tk35a08n1.pdf
TK35A08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK35A08N1 TK35A08N1 TK35A08N1 TK35A08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 10.0 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enha
Otros transistores... TK31V60X , TK32A12N1 , TK32E12N1 , TK33S10N1Z , TK34A10N1 , TK34E10N1 , TK35A08N1 , TK35A65W , AO4468 , TK35E08N1 , TK35N65W , TK35N65W5 , TK39A60W , TK39J60W , TK39J60W5 , TK39N60W , TK39N60W5 .
History: MMBF170LT1G | SML4080CN | SWP11N65D | SE3080A
History: MMBF170LT1G | SML4080CN | SWP11N65D | SE3080A
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