All MOSFET. TK35A65W5 Datasheet

 

TK35A65W5 Datasheet and Replacement


   Type Designator: TK35A65W5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 115 nC
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO-220SIS
 

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TK35A65W5 Datasheet (PDF)

 ..1. Size:240K  toshiba
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TK35A65W5

TK35A65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK35A65W5TK35A65W5TK35A65W5TK35A65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 130 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.08 (typ.) by using Super Junction Struc

 ..2. Size:253K  inchange semiconductor
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TK35A65W5

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK35A65W5ITK35A65W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.08 (typ.)Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=2.1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

 6.1. Size:237K  toshiba
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TK35A65W5

TK35A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK35A65WTK35A65WTK35A65WTK35A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.068 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enh

 9.1. Size:232K  toshiba
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TK35A65W5

TK35A08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK35A08N1TK35A08N1TK35A08N1TK35A08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 10.0 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enha

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Datasheet: TK31V60X , TK32A12N1 , TK32E12N1 , TK33S10N1Z , TK34A10N1 , TK34E10N1 , TK35A08N1 , TK35A65W , IRFP064N , TK35E08N1 , TK35N65W , TK35N65W5 , TK39A60W , TK39J60W , TK39J60W5 , TK39N60W , TK39N60W5 .

History: 2SK3082L | APM9928

Keywords - TK35A65W5 MOSFET datasheet

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