TK35A65W5 Specs and Replacement
Type Designator: TK35A65W5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO-220SIS
TK35A65W5 substitution
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TK35A65W5 datasheet
tk35a65w5.pdf
TK35A65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK35A65W5 TK35A65W5 TK35A65W5 TK35A65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 130 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.08 (typ.) by using Super Junction Struc... See More ⇒
tk35a65w5.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK35A65W5 ITK35A65W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.08 (typ.) Enhancement mode Vth = 3 to 4.5V (VDS = 10 V, ID=2.1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING... See More ⇒
tk35a65w.pdf
TK35A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK35A65W TK35A65W TK35A65W TK35A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.068 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enh... See More ⇒
tk35a08n1.pdf
TK35A08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK35A08N1 TK35A08N1 TK35A08N1 TK35A08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 10.0 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enha... See More ⇒
Detailed specifications: TK31V60X, TK32A12N1, TK32E12N1, TK33S10N1Z, TK34A10N1, TK34E10N1, TK35A08N1, TK35A65W, AO4468, TK35E08N1, TK35N65W, TK35N65W5, TK39A60W, TK39J60W, TK39J60W5, TK39N60W, TK39N60W5
Keywords - TK35A65W5 MOSFET specs
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History: VST012N06MS | IXFC52N30P | HM4435B | SVT04230NR | AP95T06GS | MDS3753EURH | RDD050N20
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