TK35N65W MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK35N65W datasheet

..1. Size:246K toshiba
tk35n65w.pdf pdf_icon

TK35N65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK35N65W TK35N65W TK35N65W TK35N65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.068 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

0.1. Size:249K toshiba
tk35n65w5.pdf pdf_icon

TK35N65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK35N65W5 TK35N65W5 TK35N65W5 TK35N65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 130 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.08 (typ.) by used to Super Junction Str

9.1. Size:668K first silicon
ftk35n33pdfn56.pdf pdf_icon

SEMICONDUCTOR FTK35N03PDFN56 TECHNICAL DATA N-Channel Power MOSFET PDFN5 6-8L DESCRIPTION The FTK35N03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte

9.2. Size:586K first silicon
ftk35n03pdfn33.pdf pdf_icon

SEMICONDUCTOR FTK35N03PDFN33 TECHNICAL DATA N-Channel Power MOSFET DESCRIPTION PDFN3.3 3.3-8L The FTK35N03PDFN33 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully char

Otros transistores... TK32E12N1 , TK33S10N1Z , TK34A10N1 , TK34E10N1 , TK35A08N1 , TK35A65W , TK35A65W5 , TK35E08N1 , IRFZ44N , TK35N65W5 , TK39A60W , TK39J60W , TK39J60W5 , TK39N60W , TK39N60W5 , TK39N60X , TK3P80E .