TK35N65W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK35N65W Datasheet (PDF)

..1. Size:246K toshiba
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TK35N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK35N65WTK35N65WTK35N65WTK35N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.068 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

0.1. Size:249K toshiba
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TK35N65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK35N65W5TK35N65W5TK35N65W5TK35N65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 130 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.08 (typ.) by used to Super Junction Str

9.1. Size:668K first silicon
ftk35n33pdfn56.pdf pdf_icon

SEMICONDUCTORFTK35N03PDFN56TECHNICAL DATAN-Channel Power MOSFETPDFN56-8L DESCRIPTION The FTK35N03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte

9.2. Size:586K first silicon
ftk35n03pdfn33.pdf pdf_icon

SEMICONDUCTORFTK35N03PDFN33TECHNICAL DATAN-Channel Power MOSFETDESCRIPTION PDFN3.33.3-8L The FTK35N03PDFN33 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully char

Otros transistores... TK32E12N1 , TK33S10N1Z , TK34A10N1 , TK34E10N1 , TK35A08N1 , TK35A65W , TK35A65W5 , TK35E08N1 , IRFZ44N , TK35N65W5 , TK39A60W , TK39J60W , TK39J60W5 , TK39N60W , TK39N60W5 , TK39N60X , TK3P80E .