TK35N65W Datasheet and Replacement. Cross Reference Search

TK35N65W Datasheet (PDF)

..1. Size:246K toshiba
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TK35N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK35N65WTK35N65WTK35N65WTK35N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.068 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

0.1. Size:249K toshiba
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TK35N65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK35N65W5TK35N65W5TK35N65W5TK35N65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 130 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.08 (typ.) by used to Super Junction Str

9.1. Size:668K first silicon
ftk35n33pdfn56.pdf pdf_icon

SEMICONDUCTORFTK35N03PDFN56TECHNICAL DATAN-Channel Power MOSFETPDFN56-8L DESCRIPTION The FTK35N03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte

9.2. Size:586K first silicon
ftk35n03pdfn33.pdf pdf_icon

SEMICONDUCTORFTK35N03PDFN33TECHNICAL DATAN-Channel Power MOSFETDESCRIPTION PDFN3.33.3-8L The FTK35N03PDFN33 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully char

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .