TK39N60X Todos los transistores

 

TK39N60X MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK39N60X

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 270 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 38.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: TO-247

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TK39N60X datasheet

 ..1. Size:245K  toshiba
tk39n60x.pdf pdf_icon

TK39N60X

TK39N60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK39N60X TK39N60X TK39N60X TK39N60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.055 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit

 7.1. Size:244K  toshiba
tk39n60w.pdf pdf_icon

TK39N60X

TK39N60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK39N60W TK39N60W TK39N60W TK39N60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.055 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 7.2. Size:245K  toshiba
tk39n60w5.pdf pdf_icon

TK39N60X

TK39N60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK39N60W5 TK39N60W5 TK39N60W5 TK39N60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 150 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.062 (typ.) by using Super Junction Stru

 7.3. Size:267K  inchange semiconductor
tk39n60w.pdf pdf_icon

TK39N60X

isc N-Channel MOSFET Transistor TK39N60W FEATURES With TO-247 packaging With low gate drive requirements Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V

Otros transistores... TK35E08N1 , TK35N65W , TK35N65W5 , TK39A60W , TK39J60W , TK39J60W5 , TK39N60W , TK39N60W5 , 50N06 , TK3P80E , TK40A06N1 , TK40E06N1 , TK40S06N1L , TK42A12N1 , TK42E12N1 , TK45S06K3L , TK46A08N1 .

 

 

 


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