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TK39N60X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK39N60X
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 270 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 38.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 85 nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: TO-247
 

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TK39N60X Datasheet (PDF)

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TK39N60X

TK39N60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK39N60XTK39N60XTK39N60XTK39N60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.055 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

 7.1. Size:244K  toshiba
 tk39n60w.pdf pdf_icon

TK39N60X

TK39N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK39N60WTK39N60WTK39N60WTK39N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.055 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 7.2. Size:245K  toshiba
 tk39n60w5.pdf pdf_icon

TK39N60X

TK39N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK39N60W5TK39N60W5TK39N60W5TK39N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 150 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.062 (typ.) by using Super Junction Stru

 7.3. Size:267K  inchange semiconductor
 tk39n60w.pdf pdf_icon

TK39N60X

isc N-Channel MOSFET Transistor TK39N60WFEATURESWith TO-247 packagingWith low gate drive requirementsLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 V

MOSTRAR MÁS

Otros transistores... TK35E08N1 , TK35N65W , TK35N65W5 , TK39A60W , TK39J60W , TK39J60W5 , TK39N60W , TK39N60W5 , 50N06 , TK3P80E , TK40A06N1 , TK40E06N1 , TK40S06N1L , TK42A12N1 , TK42E12N1 , TK45S06K3L , TK46A08N1 .

History: BUK7Y28-75B

 

 
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