TK39N60X PDF and Equivalents Search

 

TK39N60X Specs and Replacement

Type Designator: TK39N60X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 270 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 38.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO-247

TK39N60X substitution

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TK39N60X datasheet

 ..1. Size:245K  toshiba
 tk39n60x.pdf pdf_icon

TK39N60X

TK39N60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK39N60X TK39N60X TK39N60X TK39N60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.055 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit... See More ⇒

 7.1. Size:244K  toshiba
 tk39n60w.pdf pdf_icon

TK39N60X

TK39N60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK39N60W TK39N60W TK39N60W TK39N60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.055 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

 7.2. Size:245K  toshiba
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TK39N60X

TK39N60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK39N60W5 TK39N60W5 TK39N60W5 TK39N60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 150 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.062 (typ.) by using Super Junction Stru... See More ⇒

 7.3. Size:267K  inchange semiconductor
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TK39N60X

isc N-Channel MOSFET Transistor TK39N60W FEATURES With TO-247 packaging With low gate drive requirements Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V ... See More ⇒

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Detailed specifications: TK35E08N1, TK35N65W, TK35N65W5, TK39A60W, TK39J60W, TK39J60W5, TK39N60W, TK39N60W5, 50N06, TK3P80E, TK40A06N1, TK40E06N1, TK40S06N1L, TK42A12N1, TK42E12N1, TK45S06K3L, TK46A08N1

Keywords - TK39N60X MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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