All MOSFET. TK39N60X Datasheet

 

TK39N60X Datasheet and Replacement


   Type Designator: TK39N60X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 38.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 85 nC
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO-247
 

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TK39N60X Datasheet (PDF)

 ..1. Size:245K  toshiba
 tk39n60x.pdf pdf_icon

TK39N60X

TK39N60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK39N60XTK39N60XTK39N60XTK39N60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.055 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

 7.1. Size:244K  toshiba
 tk39n60w.pdf pdf_icon

TK39N60X

TK39N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK39N60WTK39N60WTK39N60WTK39N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.055 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 7.2. Size:245K  toshiba
 tk39n60w5.pdf pdf_icon

TK39N60X

TK39N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK39N60W5TK39N60W5TK39N60W5TK39N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 150 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.062 (typ.) by using Super Junction Stru

 7.3. Size:267K  inchange semiconductor
 tk39n60w.pdf pdf_icon

TK39N60X

isc N-Channel MOSFET Transistor TK39N60WFEATURESWith TO-247 packagingWith low gate drive requirementsLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 V

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Keywords - TK39N60X MOSFET datasheet

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