TK4P60D MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK4P60D datasheet

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TK4P60D MOSFETs Silicon N-Channel MOS ( -MOS ) TK4P60D TK4P60D TK4P60D TK4P60D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.4 (typ.) (2) High forward transfer admittance Yfs = 2.5 S (typ.) (3) Low leakage current IDSS = 1

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TK4P60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4P60DA Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.7 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.4 to 4

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TK4P60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4P60DB Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.4 to

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK4P60DA FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

Otros transistores... TK40S06N1L , TK42A12N1 , TK42E12N1 , TK45S06K3L , TK46A08N1 , TK46E08N1 , TK49N65W , TK49N65W5 , 10N60 , TK4Q60DA , TK50A04K3 , TK50S04K3L , TK55S10N1 , TK56A12N1 , TK56E12N1 , TK58A06N1 , TK58E06N1 .