TK4P60D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK4P60D Datasheet (PDF)

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TK4P60DMOSFETs Silicon N-Channel MOS (-MOS)TK4P60DTK4P60DTK4P60DTK4P60D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.4 (typ.)(2) High forward transfer admittance: |Yfs| = 2.5 S (typ.)(3) Low leakage current: IDSS = 1

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TK4P60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P60DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: Yfs = 2.2 S (typ.) Low leakage current: IDSS = 10A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4

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TK4P60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P60DB Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: Yfs = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to

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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK4P60DAFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Otros transistores... TK40S06N1L , TK42A12N1 , TK42E12N1 , TK45S06K3L , TK46A08N1 , TK46E08N1 , TK49N65W , TK49N65W5 , IRFB4227 , TK4Q60DA , TK50A04K3 , TK50S04K3L , TK55S10N1 , TK56A12N1 , TK56E12N1 , TK58A06N1 , TK58E06N1 .