TK4P60D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK4P60D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm
   Paquete / Cubierta: DPAK

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TK4P60D Datasheet (PDF)

..1. Size:234K toshiba
tk4p60d.pdf

TK4P60DMOSFETs Silicon N-Channel MOS (-MOS)TK4P60DTK4P60DTK4P60DTK4P60D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.4 (typ.)(2) High forward transfer admittance: |Yfs| = 2.5 S (typ.)(3) Low leakage current: IDSS = 1

0.1. Size:205K toshiba
tk4p60da.pdf

TK4P60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P60DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: Yfs = 2.2 S (typ.) Low leakage current: IDSS = 10A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4

0.2. Size:208K toshiba
tk4p60db.pdf

TK4P60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P60DB Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: Yfs = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to

0.3. Size:208K inchange semiconductor
tk4p60da.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK4P60DAFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

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