TK4P60D PDF and Equivalents Search

 

TK4P60D Specs and Replacement

Type Designator: TK4P60D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm

Package: DPAK

TK4P60D substitution

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TK4P60D datasheet

 ..1. Size:234K  toshiba
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TK4P60D

TK4P60D MOSFETs Silicon N-Channel MOS ( -MOS ) TK4P60D TK4P60D TK4P60D TK4P60D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.4 (typ.) (2) High forward transfer admittance Yfs = 2.5 S (typ.) (3) Low leakage current IDSS = 1... See More ⇒

 0.1. Size:205K  toshiba
tk4p60da.pdf pdf_icon

TK4P60D

TK4P60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4P60DA Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.7 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.4 to 4... See More ⇒

 0.2. Size:208K  toshiba
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TK4P60D

TK4P60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4P60DB Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.4 to ... See More ⇒

 0.3. Size:208K  inchange semiconductor
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TK4P60D

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK4P60DA FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒

Detailed specifications: TK40S06N1L, TK42A12N1, TK42E12N1, TK45S06K3L, TK46A08N1, TK46E08N1, TK49N65W, TK49N65W5, 10N60, TK4Q60DA, TK50A04K3, TK50S04K3L, TK55S10N1, TK56A12N1, TK56E12N1, TK58A06N1, TK58E06N1

Keywords - TK4P60D MOSFET specs

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