TK5A60W5 Todos los transistores

 ..1. Size:531K  toshiba
 tk5a60w5.pdf

TK5A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK5A60W5 TK5A60W5 TK5A60W5 TK5A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 65 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.8 (typ.) by using Super Junction Structure D

 ..2. Size:258K  inchange semiconductor
 tk5a60w5.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A60W5 ITK5A60W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.95 Easy to control Gate switching Enhancement mode Vth = 3 to 4.5V (VDS = 10 V, ID=0.23mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators

 7.1. Size:235K  toshiba
 tk5a60w.pdf

TK5A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK5A60W TK5A60W TK5A60W TK5A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.77 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance

 7.2. Size:253K  inchange semiconductor
 tk5a60w.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A60W ITK5A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.77 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.27mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulat

 8.1. Size:212K  toshiba
 tk5a60d.pdf

TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5A60D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 3.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vt

 8.2. Size:252K  inchange semiconductor
 tk5a60d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A60D ITK5A60D FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T