TK5A60W5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK5A60W5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 11.5 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 11 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.95 Ohm
   Paquete / Cubierta: TO-220SIS

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TK5A60W5 Datasheet (PDF)

..1. Size:531K toshiba
tk5a60w5.pdf

TK5A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK5A60W5TK5A60W5TK5A60W5TK5A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 65 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.8 (typ.)by using Super Junction Structure : D

..2. Size:258K inchange semiconductor
tk5a60w5.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A60W5ITK5A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.95Easy to control Gate switchingEnhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.23mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

7.1. Size:235K toshiba
tk5a60w.pdf

TK5A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK5A60WTK5A60WTK5A60WTK5A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.77 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

7.2. Size:253K inchange semiconductor
tk5a60w.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A60WITK5A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.77 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.27mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulat

8.1. Size:212K toshiba
tk5a60d.pdf

TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5A60D Switching Regulator Applications Unit: mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: Yfs = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vt

8.2. Size:252K inchange semiconductor
tk5a60d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A60DITK5A60DFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

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