Справочник MOSFET. TK5A60W5

 

TK5A60W5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK5A60W5
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 11.5 nC
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 11 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.95 Ohm
   Тип корпуса: TO-220SIS

 Аналог (замена) для TK5A60W5

 

 

TK5A60W5 Datasheet (PDF)

 ..1. Size:531K  toshiba
 tk5a60w5.pdf

TK5A60W5 TK5A60W5

TK5A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK5A60W5TK5A60W5TK5A60W5TK5A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 65 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.8 (typ.)by using Super Junction Structure : D

 ..2. Size:258K  inchange semiconductor
 tk5a60w5.pdf

TK5A60W5 TK5A60W5

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A60W5ITK5A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.95Easy to control Gate switchingEnhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.23mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

 7.1. Size:235K  toshiba
 tk5a60w.pdf

TK5A60W5 TK5A60W5

TK5A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK5A60WTK5A60WTK5A60WTK5A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.77 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

 7.2. Size:253K  inchange semiconductor
 tk5a60w.pdf

TK5A60W5 TK5A60W5

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A60WITK5A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.77 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.27mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulat

 8.1. Size:212K  toshiba
 tk5a60d.pdf

TK5A60W5 TK5A60W5

TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5A60D Switching Regulator Applications Unit: mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: Yfs = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vt

 8.2. Size:252K  inchange semiconductor
 tk5a60d.pdf

TK5A60W5 TK5A60W5

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A60DITK5A60DFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

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