TK5Q60W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK5Q60W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 10 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
Encapsulados: IPAK
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TK5Q60W datasheet
tk5q60w.pdf
TK5Q60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK5Q60W TK5Q60W TK5Q60W TK5Q60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.77 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance
tk5q60w.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK5Q60W ITK5Q60W FEATURES Low drain-source on-resistance RDS(on) 900m . Enhancement mode Vth =2.7 to 3.7V (VDS = 10 V, ID=0.27mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25
tk5q65w.pdf
TK5Q65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK5Q65W TK5Q65W TK5Q65W TK5Q65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.02 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement
Otros transistores... TK58A06N1 , TK58E06N1 , TK5A60W , TK5A60W5 , TK5A65W , TK5P60W , TK5P60W5 , TK5P65W , IRF4905 , TK5Q65W , TK60F08K3 , TK62J60W , TK62J60W5 , TK62N60W , TK62N60W5 , TK62N60X , TK65G10N1 .
History: RU6888R | STD10PF06
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