TK5Q60W MOSFET. Datasheet pdf. Equivalent
Type Designator: TK5Q60W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 60 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V
Maximum Drain Current |Id|: 5.4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 10.5 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 10 pF
Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm
Package: IPAK
TK5Q60W Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK5Q60W Datasheet (PDF)
0.1. tk5q60w.pdf 
Size:241K _toshiba
TK5Q60W MOSFETs Silicon N-Channel MOS (DTMOS) TK5Q60W TK5Q60W TK5Q60W TK5Q60W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.77 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhance
9.1. tk5q65w.pdf Size:377K _toshiba
TK5Q65W MOSFETs Silicon N-Channel MOS (DTMOS) TK5Q65W TK5Q65W TK5Q65W TK5Q65W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.02 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement
Datasheet: TK58A06N1 , TK58E06N1 , TK5A60W , TK5A60W5 , TK5A65W , TK5P60W , TK5P60W5 , TK5P65W , 2SK3569 , TK5Q65W , TK60F08K3 , TK62J60W , TK62J60W5 , TK62N60W , TK62N60W5 , TK62N60X , TK65G10N1 .
