All MOSFET. TK5Q60W Datasheet

 

TK5Q60W MOSFET. Datasheet pdf. Equivalent

Type Designator: TK5Q60W

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V

Maximum Drain Current |Id|: 5.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10.5 nC

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 10 pF

Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm

Package: IPAK

TK5Q60W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK5Q60W Datasheet (PDF)

0.1. tk5q60w.pdf Size:241K _toshiba

TK5Q60W
TK5Q60W

TK5Q60W MOSFETs Silicon N-Channel MOS (DTMOS) TK5Q60W TK5Q60W TK5Q60W TK5Q60W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.77 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhance

9.1. tk5q65w.pdf Size:377K _toshiba

TK5Q60W
TK5Q60W

TK5Q65W MOSFETs Silicon N-Channel MOS (DTMOS) TK5Q65W TK5Q65W TK5Q65W TK5Q65W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.02 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement

Datasheet: TK58A06N1 , TK58E06N1 , TK5A60W , TK5A60W5 , TK5A65W , TK5P60W , TK5P60W5 , TK5P65W , 2SK3569 , TK5Q65W , TK60F08K3 , TK62J60W , TK62J60W5 , TK62N60W , TK62N60W5 , TK62N60X , TK65G10N1 .

 

 
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