TK5Q60W Datasheet and Replacement
Type Designator: TK5Q60W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 10 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: IPAK
TK5Q60W substitution
TK5Q60W Datasheet (PDF)
tk5q60w.pdf

TK5Q60WMOSFETs Silicon N-Channel MOS (DTMOS)TK5Q60WTK5Q60WTK5Q60WTK5Q60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.77 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance
tk5q60w.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK5Q60WITK5Q60WFEATURESLow drain-source on-resistance:RDS(on) 900m.Enhancement mode:Vth =2.7 to 3.7V (VDS = 10 V, ID=0.27mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25
tk5q65w.pdf

TK5Q65WMOSFETs Silicon N-Channel MOS (DTMOS)TK5Q65WTK5Q65WTK5Q65WTK5Q65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.02 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement
Datasheet: TK58A06N1 , TK58E06N1 , TK5A60W , TK5A60W5 , TK5A65W , TK5P60W , TK5P60W5 , TK5P65W , IRF4905 , TK5Q65W , TK60F08K3 , TK62J60W , TK62J60W5 , TK62N60W , TK62N60W5 , TK62N60X , TK65G10N1 .
Keywords - TK5Q60W MOSFET datasheet
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