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TK62N60W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK62N60W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 400 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 61.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 58 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO-247
 

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TK62N60W Datasheet (PDF)

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 tk62n60w.pdf pdf_icon

TK62N60W

TK62N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK62N60WTK62N60WTK62N60WTK62N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.033 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 0.1. Size:244K  toshiba
 tk62n60w5.pdf pdf_icon

TK62N60W

TK62N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK62N60W5TK62N60W5TK62N60W5TK62N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 170 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.036 (typ.) by used to Super Junction St

 7.1. Size:245K  toshiba
 tk62n60x.pdf pdf_icon

TK62N60W

TK62N60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK62N60XTK62N60XTK62N60XTK62N60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.033 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

 9.1. Size:583K  ixys
 ixtk62n25.pdf pdf_icon

TK62N60W

IXTK 62N25 VDSS = 250 VHigh CurrentID25 = 62 AMegaMOSTMFETRDS(on) = 35 mN-Channel Enhancement ModePreliminary Data SheetSymbol Test conditions Maximum ratingsTO-264VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1.0 M 250 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)GID25 TC = 25C62 ADIDM TC = 25C, pulse width

MOSTRAR MÁS

Otros transistores... TK5P60W , TK5P60W5 , TK5P65W , TK5Q60W , TK5Q65W , TK60F08K3 , TK62J60W , TK62J60W5 , AON7410 , TK62N60W5 , TK62N60X , TK65G10N1 , TK65S04N1L , TK6A60W , TK6A65W , TK6A80E , TK6P60W .

History: WMK07N80M3 | SM4504NHKP | AP2310GN-HF | 2SK1323 | SI4062DY | SI3429EDV | WPMD2008

 

 
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