TK62N60W - аналоги, параметры транзистора - Справочник транзисторов

TK62N60W даташит

..1. Size:245K toshiba
tk62n60w.pdf pdf_icon

TK62N60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK62N60W TK62N60W TK62N60W TK62N60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.033 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

0.1. Size:244K toshiba
tk62n60w5.pdf pdf_icon

TK62N60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK62N60W5 TK62N60W5 TK62N60W5 TK62N60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 170 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.036 (typ.) by used to Super Junction St

7.1. Size:245K toshiba
tk62n60x.pdf pdf_icon

TK62N60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK62N60X TK62N60X TK62N60X TK62N60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.033 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit

9.1. Size:583K ixys
ixtk62n25.pdf pdf_icon

IXTK 62N25 VDSS = 250 V High Current ID25 = 62 A MegaMOSTMFET RDS(on) = 35 m N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings TO-264 VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1.0 M 250 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) G ID25 TC = 25 C62 A D IDM TC = 25 C, pulse width

Другие MOSFET... TK5P60W , TK5P60W5 , TK5P65W , TK5Q60W , TK5Q65W , TK60F08K3 , TK62J60W , TK62J60W5 , 4435 , TK62N60W5 , TK62N60X , TK65G10N1 , TK65S04N1L , TK6A60W , TK6A65W , TK6A80E , TK6P60W .