TK72A08N1 Todos los transistores

 

TK72A08N1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK72A08N1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 72 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 1300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: TO-220SIS

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TK72A08N1 datasheet

 ..1. Size:234K  toshiba
 tk72a08n1.pdf pdf_icon

TK72A08N1

TK72A08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK72A08N1 TK72A08N1 TK72A08N1 TK72A08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.7 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enhan

 ..2. Size:253K  inchange semiconductor
 tk72a08n1.pdf pdf_icon

TK72A08N1

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK72A08N1 ITK72A08N1 FEATURES Low drain-source on-resistance RDS(ON) = 4.5m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI

 9.1. Size:233K  toshiba
 tk72a12n1.pdf pdf_icon

TK72A08N1

TK72A12N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK72A12N1 TK72A12N1 TK72A12N1 TK72A12N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.7 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 120 V) (3) Enha

 9.2. Size:251K  inchange semiconductor
 tk72a12n1.pdf pdf_icon

TK72A08N1

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK72A12N1 ITK72A12N1 FEATURES Low drain-source on-resistance RDS(ON) = 4.5m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI

MOSTRAR MÁS

Otros transistores... TK6A60W , TK6A65W , TK6A80E , TK6P60W , TK6P65W , TK6Q60W , TK6Q65W , TK70J04K3Z , NCEP15T14 , TK72A12N1 , TK72E08N1 , TK72E12N1 , TK7A60W , TK7A60W5 , TK7A65W , TK7A90E , TK7J90E .

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History: SLF4N65SV

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