TK72A08N1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK72A08N1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 72 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 1300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TO-220SIS

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TK72A08N1 Datasheet (PDF)

..1. Size:234K toshiba
tk72a08n1.pdf

TK72A08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK72A08N1TK72A08N1TK72A08N1TK72A08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.7 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enhan

..2. Size:253K inchange semiconductor
tk72a08n1.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK72A08N1ITK72A08N1FEATURESLow drain-source on-resistance:RDS(ON) = 4.5m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI

9.1. Size:233K toshiba
tk72a12n1.pdf

TK72A12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK72A12N1TK72A12N1TK72A12N1TK72A12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.7 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enha

9.2. Size:251K inchange semiconductor
tk72a12n1.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK72A12N1ITK72A12N1FEATURESLow drain-source on-resistance:RDS(ON) = 4.5m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI

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