Справочник MOSFET. TK72A08N1

 

TK72A08N1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK72A08N1
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 72 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 1300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: TO-220SIS

 Аналог (замена) для TK72A08N1

 

 

TK72A08N1 Datasheet (PDF)

 ..1. Size:234K  toshiba
 tk72a08n1.pdf

TK72A08N1 TK72A08N1

TK72A08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK72A08N1TK72A08N1TK72A08N1TK72A08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.7 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enhan

 ..2. Size:253K  inchange semiconductor
 tk72a08n1.pdf

TK72A08N1 TK72A08N1

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK72A08N1ITK72A08N1FEATURESLow drain-source on-resistance:RDS(ON) = 4.5m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI

 9.1. Size:233K  toshiba
 tk72a12n1.pdf

TK72A08N1 TK72A08N1

TK72A12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK72A12N1TK72A12N1TK72A12N1TK72A12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.7 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enha

 9.2. Size:251K  inchange semiconductor
 tk72a12n1.pdf

TK72A08N1 TK72A08N1

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK72A12N1ITK72A12N1FEATURESLow drain-source on-resistance:RDS(ON) = 4.5m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI

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