TK7A60W Todos los transistores

 ..1. Size:238K  toshiba
 tk7a60w.pdf

TK7A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK7A60W TK7A60W TK7A60W TK7A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.5 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancem

 ..2. Size:253K  inchange semiconductor
 tk7a60w.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK7A60W ITK7A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.5 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.35mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulato

 0.1. Size:238K  toshiba
 tk7a60w5.pdf

TK7A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK7A60W5 TK7A60W5 TK7A60W5 TK7A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 75 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.54 (typ.) by used to Super

 0.2. Size:253K  inchange semiconductor
 tk7a60w5.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK7A60W5 ITK7A60W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.54 (typ.) Easy to control Gate switching Enhancement mode Vth = 3 to 4.5V (VDS = 10 V, ID=0.35mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulat

 9.1. Size:374K  toshiba
 tk7a65w.pdf

TK7A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK7A65W TK7A65W TK7A65W TK7A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.64 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement

 9.2. Size:202K  toshiba
 tk7a65d.pdf

TK7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK7A65D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Yfs = 4.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 650 V) Enhancement mode Vth = 2.

 9.3. Size:253K  inchange semiconductor
 tk7a65d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK7A65D ITK7A65D FEATURES Low drain-source on-resistance RDS(ON) = 0.8 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T