TK7A60W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK7A60W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.7 V
   Qgⓘ - Carga de la puerta: 15 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 13 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO-220SIS

Búsqueda de reemplazo de MOSFET TK7A60W

TK7A60W Datasheet (PDF)

..1. Size:238K toshiba
tk7a60w.pdf

TK7A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK7A60WTK7A60WTK7A60WTK7A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.5 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancem

..2. Size:253K inchange semiconductor
tk7a60w.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK7A60WITK7A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.5 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.35mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulato

0.1. Size:238K toshiba
tk7a60w5.pdf

TK7A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK7A60W5TK7A60W5TK7A60W5TK7A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 75 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.54 (typ.) by used to Super

0.2. Size:253K inchange semiconductor
tk7a60w5.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK7A60W5ITK7A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.54 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.35mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulat

9.1. Size:374K toshiba
tk7a65w.pdf

TK7A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK7A65WTK7A65WTK7A65WTK7A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.64 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement

9.2. Size:202K toshiba
tk7a65d.pdf

TK7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK7A65D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement mode: Vth = 2.

9.3. Size:253K inchange semiconductor
tk7a65d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK7A65DITK7A65DFEATURESLow drain-source on-resistance:RDS(ON) = 0.8 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

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