TK7A60W5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK7A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK7A60W5TK7A60W5TK7A60W5TK7A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 75 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.54 (typ.) by used to Super

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK7A60W5ITK7A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.54 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.35mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulat

TK7A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK7A60WTK7A60WTK7A60WTK7A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.5 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancem

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK7A60WITK7A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.5 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.35mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulato

TK7A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK7A65WTK7A65WTK7A65WTK7A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.64 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement

TK7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK7A65D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement mode: Vth = 2.

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK7A65DITK7A65DFEATURESLow drain-source on-resistance:RDS(ON) = 0.8 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T