All MOSFET. TK7A60W5 Datasheet

 

TK7A60W5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK7A60W5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-220SIS

 TK7A60W5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK7A60W5 Datasheet (PDF)

 ..1. Size:238K  toshiba
 tk7a60w5.pdf

TK7A60W5 TK7A60W5

TK7A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK7A60W5TK7A60W5TK7A60W5TK7A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 75 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.54 (typ.) by used to Super

 ..2. Size:253K  inchange semiconductor
 tk7a60w5.pdf

TK7A60W5 TK7A60W5

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK7A60W5ITK7A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.54 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.35mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulat

 7.1. Size:238K  toshiba
 tk7a60w.pdf

TK7A60W5 TK7A60W5

TK7A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK7A60WTK7A60WTK7A60WTK7A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.5 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancem

 7.2. Size:253K  inchange semiconductor
 tk7a60w.pdf

TK7A60W5 TK7A60W5

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK7A60WITK7A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.5 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.35mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulato

 9.1. Size:374K  toshiba
 tk7a65w.pdf

TK7A60W5 TK7A60W5

TK7A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK7A65WTK7A65WTK7A65WTK7A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.64 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement

 9.2. Size:202K  toshiba
 tk7a65d.pdf

TK7A60W5 TK7A60W5

TK7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK7A65D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement mode: Vth = 2.

 9.3. Size:253K  inchange semiconductor
 tk7a65d.pdf

TK7A60W5 TK7A60W5

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK7A65DITK7A65DFEATURESLow drain-source on-resistance:RDS(ON) = 0.8 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BRFL7N65S | CSD87355Q5D | HAT2291C | FQB4N50TM | 2SK3326B

 

 
Back to Top