TK8A60W5 Todos los transistores

 

TK8A60W5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK8A60W5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 16 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm

Encapsulados: TO-220SIS

 Búsqueda de reemplazo de TK8A60W5 MOSFET

- Selecciónⓘ de transistores por parámetros

 

TK8A60W5 datasheet

 ..1. Size:261K  toshiba
 tk8a60w5.pdf pdf_icon

TK8A60W5

TK8A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK8A60W5 TK8A60W5 TK8A60W5 TK8A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 80 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.44 (typ.) by used to Super

 7.1. Size:264K  toshiba
 tk8a60w.pdf pdf_icon

TK8A60W5

TK8A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK8A60W TK8A60W TK8A60W TK8A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.42 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance

 8.1. Size:197K  toshiba
 tk8a60da.pdf pdf_icon

TK8A60W5

TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8A60DA Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 8.2. Size:253K  inchange semiconductor
 tk8a60da.pdf pdf_icon

TK8A60W5

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A60DA ITK8A60DA FEATURES Low drain-source on-resistance RDS(ON) = 0.8 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING

MOSTRAR MÁS

Otros transistores... TK7P60W , TK7P60W5 , TK7P65W , TK7Q60W , TK7Q65W , TK7S10N1Z , TK80A04K3L , TK8A60W , 20N50 , TK8A65W , TK8P60W , TK8P60W5 , TK8P65W , TK8Q60W , TK8Q65W , TK90S06N1L , TK9A65W .

 

 

 

 

↑ Back to Top
.