TK8A60W5 - аналоги и даташиты транзистора

 

TK8A60W5 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: TK8A60W5
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 16 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.54 Ohm
   Тип корпуса: TO-220SIS

 Аналог (замена) для TK8A60W5

 

TK8A60W5 Datasheet (PDF)

 ..1. Size:261K  toshiba
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TK8A60W5

TK8A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK8A60W5 TK8A60W5 TK8A60W5 TK8A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 80 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.44 (typ.) by used to Super

 7.1. Size:264K  toshiba
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TK8A60W5

TK8A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK8A60W TK8A60W TK8A60W TK8A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.42 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance

 8.1. Size:197K  toshiba
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TK8A60W5

TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8A60DA Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 8.2. Size:253K  inchange semiconductor
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TK8A60W5

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A60DA ITK8A60DA FEATURES Low drain-source on-resistance RDS(ON) = 0.8 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING

Другие MOSFET... TK7P60W , TK7P60W5 , TK7P65W , TK7Q60W , TK7Q65W , TK7S10N1Z , TK80A04K3L , TK8A60W , 20N50 , TK8A65W , TK8P60W , TK8P60W5 , TK8P65W , TK8Q60W , TK8Q65W , TK90S06N1L , TK9A65W .

History: SSF1016A | PDC3903Z

 

 
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