TK8A65W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK8A65W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 16 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
   Paquete / Cubierta: TO-220SIS

Búsqueda de reemplazo de MOSFET TK8A65W

TK8A65W Datasheet (PDF)

..1. Size:312K toshiba
tk8a65w.pdf

TK8A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK8A65WTK8A65WTK8A65WTK8A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.53 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancemen

..2. Size:253K inchange semiconductor
tk8a65w.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A65WITK8A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.53 (typ.)Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

8.1. Size:191K toshiba
tk8a65d.pdf

TK8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol

8.2. Size:253K inchange semiconductor
tk8a65d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A65DITK8A65DFEATURESLow drain-source on-resistance:RDS(ON) = 0.7 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

9.1. Size:264K toshiba
tk8a60w.pdf

TK8A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK8A60WTK8A60WTK8A60WTK8A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.42 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

9.2. Size:261K toshiba
tk8a60w5.pdf

TK8A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK8A60W5TK8A60W5TK8A60W5TK8A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 80 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.44 (typ.) by used to Super

9.3. Size:197K toshiba
tk8a60da.pdf

TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A60DA Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: Yfs = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

9.4. Size:253K inchange semiconductor
tk8a60da.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A60DAITK8A60DAFEATURESLow drain-source on-resistance:RDS(ON) = 0.8 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

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