TK8A65W - описание и поиск аналогов

TK8A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK8A65W TK8A65W TK8A65W TK8A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.53 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancemen

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A65W ITK8A65W FEATURES Low drain-source on-resistance RDS(ON) = 0.53 (typ.) Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

TK8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8A65D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.7 (typ.) High forward transfer admittance Yfs = 4.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 650 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A65D ITK8A65D FEATURES Low drain-source on-resistance RDS(ON) = 0.7 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

TK8A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK8A60W TK8A60W TK8A60W TK8A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.42 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance

TK8A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK8A60W5 TK8A60W5 TK8A60W5 TK8A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 80 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.44 (typ.) by used to Super

TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK8A60DA Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A60DA ITK8A60DA FEATURES Low drain-source on-resistance RDS(ON) = 0.8 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING