TK8P65W Todos los transistores

 

TK8P65W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK8P65W

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 80 W

Tensión drenaje-fuente (Vds): 650 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 7.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.5 V

Carga de compuerta (Qg): 16 nC

Tiempo de elevación (tr): 20 nS

Conductancia de drenaje-sustrato (Cd): 16 pF

Resistencia drenaje-fuente RDS(on): 0.67 Ohm

Empaquetado / Estuche: DPAK

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TK8P65W Datasheet (PDF)

1.1. tk8p65w.pdf Size:263K _toshiba

TK8P65W
TK8P65W

TK8P65W MOSFETs Silicon N-Channel MOS (DTMOS) TK8P65W TK8P65W TK8P65W TK8P65W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.55 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhance

5.1. tk8p60w.pdf Size:300K _toshiba

TK8P65W
TK8P65W

TK8P60W MOSFETs Silicon N-Channel MOS (DTMOS) TK8P60W TK8P60W TK8P60W TK8P60W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhance

5.2. tk8p60w5.pdf Size:282K _toshiba

TK8P65W
TK8P65W

TK8P60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK8P60W5 TK8P60W5 TK8P60W5 TK8P60W5 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators • Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time: trr = 80 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.44 Ω (typ.) by used to Super

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