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TK8P65W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK8P65W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 16 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.67 Ohm
   Paquete / Cubierta: DPAK
     - Selección de transistores por parámetros

 

TK8P65W Datasheet (PDF)

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 tk8p65w.pdf pdf_icon

TK8P65W

TK8P65WMOSFETs Silicon N-Channel MOS (DTMOS)TK8P65WTK8P65WTK8P65WTK8P65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.55 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

 9.1. Size:300K  toshiba
 tk8p60w.pdf pdf_icon

TK8P65W

TK8P60WMOSFETs Silicon N-Channel MOS (DTMOS)TK8P60WTK8P60WTK8P60WTK8P60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.42 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

 9.2. Size:282K  toshiba
 tk8p60w5.pdf pdf_icon

TK8P65W

TK8P60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK8P60W5TK8P60W5TK8P60W5TK8P60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 80 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.44 (typ.) by used to Super

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History: ME2306BS-G | SWNC4N65DC | NVD14N03R

 

 
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