TK8P65W Todos los transistores

 

TK8P65W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK8P65W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 16 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.67 Ohm
   Paquete / Cubierta: DPAK
 

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TK8P65W datasheet

 ..1. Size:263K  toshiba
 tk8p65w.pdf pdf_icon

TK8P65W

TK8P65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK8P65W TK8P65W TK8P65W TK8P65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.55 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance... See More ⇒

 9.1. Size:300K  toshiba
 tk8p60w.pdf pdf_icon

TK8P65W

TK8P60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK8P60W TK8P60W TK8P60W TK8P60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.42 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance... See More ⇒

 9.2. Size:282K  toshiba
 tk8p60w5.pdf pdf_icon

TK8P65W

TK8P60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK8P60W5 TK8P60W5 TK8P60W5 TK8P60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 80 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.44 (typ.) by used to Super... See More ⇒

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