TK8P65W Datasheet and Replacement
Type Designator: TK8P65W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 16 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.67 Ohm
Package: DPAK
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TK8P65W Datasheet (PDF)
tk8p65w.pdf

TK8P65WMOSFETs Silicon N-Channel MOS (DTMOS)TK8P65WTK8P65WTK8P65WTK8P65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.55 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance
tk8p60w.pdf

TK8P60WMOSFETs Silicon N-Channel MOS (DTMOS)TK8P60WTK8P60WTK8P60WTK8P60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.42 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance
tk8p60w5.pdf

TK8P60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK8P60W5TK8P60W5TK8P60W5TK8P60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 80 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.44 (typ.) by used to Super
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AP9435GP-HF | HLML6401 | IRLR8726 | AP4407I-HF | NVD14N03R | TK20S04K3L | AP85T03GH-HF
Keywords - TK8P65W MOSFET datasheet
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History: AP9435GP-HF | HLML6401 | IRLR8726 | AP4407I-HF | NVD14N03R | TK20S04K3L | AP85T03GH-HF



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