TMD3N40ZG Todos los transistores

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TMD3N40ZG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TMD3N40ZG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 30 W

Tensión drenaje-fuente (Vds): 400 V

Tensión compuerta-fuente (Vgs): 30 V

Tensión umbral compuerta-fuente Vgs(th): 4 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 9 nS

Conductancia de drenaje-sustrato (Cd): 32 pF

Resistencia drenaje-fuente RDS(on): 3.4 Ohm

Empaquetado / Estuche: DPAK

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TMD3N40ZG Datasheet (PDF)

1.1. tmd3n40zg.pdf Size:537K _upd-mosfet

TMD3N40ZG
TMD3N40ZG

TMD3N40ZG/TMU3N40ZG Features VDSS = 440 V @Tjmax  Low gate charge ID = 2A  100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D D-PAK I-PAK G S Device Package Marking Remark TMD3N40ZG/TMU3N40ZG D-PAK/I-PAK TMD3N40ZG/TMU3N40ZG Halogen Free

5.1. tmd3n90.pdf Size:829K _upd-mosfet

TMD3N40ZG
TMD3N40ZG

 TMD3N90(G)/TMU3N90(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 900V 2.5A <5.1W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD3N90/ TMU3N90 D-PAK/I-PAK TMD3N90 / TMU3N90 RoHS TMD3N90G / TMU3N90G D-PAK/I-PAK TMD3N90G / TMU3

5.2. tmd3n50z.pdf Size:467K _upd-mosfet

TMD3N40ZG
TMD3N40ZG

TMD3N50Z(G)/TMU3N50Z(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 2.5A <2.8W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD3N50Z / TMU3N50Z D-PAK/I-PAK TMD3N50Z / TMU3N50Z RoHS TMD3N50ZG / TMU3N50ZG D-PAK/I-PAK TMD3N50ZG

 5.3. tmd3n80g.pdf Size:334K _upd-mosfet

TMD3N40ZG
TMD3N40ZG

TMD3N80G/TMU3N80G Features VDSS = 880 V @Tjmax  Low gate charge ID = 3A  100% avalanche tested  Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD3N80G/TMU3N80G D-PAK/I-PAK TMD3N80G/TMU3N80G Halogen Free Absolute Maximum Ratings Parameter

5.4. tmd3n50az.pdf Size:454K _upd-mosfet

TMD3N40ZG
TMD3N40ZG

TMD3N50AZ(G)/TMU3N50AZ(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 2.5A < 2.8W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD3N50AZ / TMU3N50AZ D-PAK/I-PAK TMD3N50AZ / TMU3N50AZ RoHS TMD3N

 5.5. ntmd3n08lr2.pdf Size:159K _onsemi

TMD3N40ZG
TMD3N40ZG

NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N-Channel Enhancement-Mode SO-8 Dual Package http://onsemi.com Features Ultra Low On-Resistance Provides Higher Efficiency 2.3 AMPERES RDS(on) = 0.215 W, VGS = 10 V 80 VOLTS RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses 215 mW @ VGS = 5 V (Typ) Internal RG = 50 W Designed for Power Management Solutions in 42 V Auto

Otros transistores... TMAN9N90 , TMAN9N90AZ , TMD16N25Z , TMD18N20Z , TMD2N40 , TMD2N60AZ , TMD2N60Z , TMD2N65AZ , IRF640 , TMD3N50AZ , TMD3N50Z , TMD3N80G , TMD3N90 , TMD4N60 , TMD4N60AZ , TMD4N65AZ , TMD4N65Z .

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