TMD6N65G Todos los transistores

 

TMD6N65G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TMD6N65G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 120 W

Tensión drenaje-fuente (Vds): 650 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 5.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 17 nC

Tiempo de elevación (tr): 30 nS

Conductancia de drenaje-sustrato (Cd): 90 pF

Resistencia drenaje-fuente RDS(on): 1.6 Ohm

Empaquetado / Estuche: DPAK

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TMD6N65G Datasheet (PDF)

1.1. tmd6n65g tmu6n65g.pdf Size:603K _update

TMD6N65G
TMD6N65G

TMD6N65G/TMU6N65G Features VDSS = 715 V @Tjmax  Low gate charge ID = 5.5A  100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD6N65/TMU6N65 D-PAK/I-PAK TMD6N65/TMU6N65 RoHS TMD6N65G/TMU6N65G D-PAK/I-PAK TM

5.1. tmd6n70.pdf Size:440K _update

TMD6N65G
TMD6N65G

TMD6N70(G)/TMU6N70(G) Features VDSS = 770 V @Tjmax  Low gate charge ID = 5A  100% avalanche tested RDS(on) = 1.65 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD6N70/TMU6N70 D-PAK/I-PAK TMD6N70/TMU6N70 RoHS TMD6N70G/TMU6N70G D-PAK/I-PAK

5.2. ntmd6n02r2-d.pdf Size:74K _onsemi

TMD6N65G
TMD6N65G

NTMD6N02R2 Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual SO-8 Package http://onsemi.com Features VDSS RDS(ON) TYP ID MAX Ultra Low RDS(on) 20 V 35 mW @ VGS = 4.5 V 6.0 A Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount Package N-Channel Diode Exhibits High Speed, Soft Recovery D Avalanche Energy Specif

 5.3. ntmd6n04r2.pdf Size:78K _onsemi

TMD6N65G
TMD6N65G

NTMD6N04R2 Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8 Features Designed for use in low voltage, high speed switching applications http://onsemi.com Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life - RDS(on) = 0.027 W, VGS = 10 V (Typ) VDSS RDS(ON) Typ ID Max - RDS(on) = 0.034 W, VGS = 4.5 V (Typ) 40 V 27 mW @ VGS = 10 V 5.8 A Miniature SOIC-8 Sur

5.4. ntmd6n03r2.pdf Size:160K _onsemi

TMD6N65G
TMD6N65G

NTMD6N03R2 Power MOSFET 30 V, 6 A, Dual N-Channel SOIC-8 Features Designed for use in low voltage, high speed switching applications http://onsemi.com Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life VDSS RDS(ON) Typ ID Max - RDS(on) = 0.024 W, VGS = 10 V (Typ) 30 V 24 mW @ VGS = 10 V 6.0 A - RDS(on) = 0.030 W, VGS = 4.5 V (Typ) Miniature SOIC-8 Surface

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