TMD6N65G Todos los transistores

 ..1. Size:603K  trinnotech
 tmd6n65g tmu6n65g.pdf

TMD6N65G/TMU6N65G Features VDSS = 715 V @Tjmax Low gate charge ID = 5.5A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD6N65/TMU6N65 D-PAK/I-PAK TMD6N65/TMU6N65 RoHS TMD6N65G/TMU6N65G D-PAK/I-PAK TM

 9.1. Size:160K  onsemi
 ntmd6n03r2.pdf

NTMD6N03R2 Power MOSFET 30 V, 6 A, Dual N-Channel SOIC-8 Features Designed for use in low voltage, high speed switching applications http //onsemi.com Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life VDSS RDS(ON) Typ ID Max - RDS(on) = 0.024 W, VGS = 10 V (Typ) 30 V 24 mW @ VGS = 10 V 6.0 A - RDS(on) = 0.030 W, VGS = 4.5 V (Typ) Miniature SOIC-8

 9.2. Size:74K  onsemi
 ntmd6n02r2-d.pdf

NTMD6N02R2 Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual SO-8 Package http //onsemi.com Features VDSS RDS(ON) TYP ID MAX Ultra Low RDS(on) 20 V 35 mW @ VGS = 4.5 V 6.0 A Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount Package N-Channel Diode Exhibits High Speed, Soft Recovery D Avalanch

 9.3. Size:78K  onsemi
 ntmd6n04r2.pdf

NTMD6N04R2 Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8 Features Designed for use in low voltage, high speed switching applications http //onsemi.com Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life - RDS(on) = 0.027 W, VGS = 10 V (Typ) VDSS RDS(ON) Typ ID Max - RDS(on) = 0.034 W, VGS = 4.5 V (Typ) 40 V 27 mW @ VGS = 10 V 5.8 A Miniature S

 9.4. Size:332K  onsemi
 ntmd6n03r2g nvmd6n03r2g.pdf

NTMD6N03R2, NVMD6N03R2 Power MOSFET 30 V, 6A, Dual N--Channel SOIC--8 http //onsemi.com Features Designed for use in low voltage, high speed switching applications VDSS RDS(ON) Typ ID Max Ultra Low On--Resistance Provides Higher Efficiency and Extends Battery Life 30 V 24 m @VGS =10V 6.0 A -- RDS(on) = 0.024 , VGS = 10 V (Typ) -- RDS(on) = 0.030 , VGS = 4.5 V (Typ) N-

 9.5. Size:440K  trinnotech
 tmd6n70.pdf

TMD6N70(G)/TMU6N70(G) Features VDSS = 770 V @Tjmax Low gate charge ID = 5A 100% avalanche tested RDS(on) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD6N70/TMU6N70 D-PAK/I-PAK TMD6N70/TMU6N70 RoHS TMD6N70G/TMU6N70G D-PAK/I-PAK

 9.6. Size:429K  trinnotech
 tmd6n70g tmu6n70g tmd6n70 tmu6n70.pdf

TMD6N70(G)/TMU6N70(G) Features VDSS = 770 V @Tjmax Low gate charge ID = 5A 100% avalanche tested RDS(on) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD6N70/TMU6N70 D-PAK/I-PAK TMD6N70/TMU6N70 RoHS TMD6N70G/TMU6N70G D-PAK/I-PAK