Справочник MOSFET. TMD6N65G

 

TMD6N65G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TMD6N65G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 17 nC
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.6 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для TMD6N65G

 

 

TMD6N65G Datasheet (PDF)

 ..1. Size:603K  trinnotech
 tmd6n65g tmu6n65g.pdf

TMD6N65G TMD6N65G

TMD6N65G/TMU6N65G Features VDSS = 715 V @Tjmax Low gate charge ID = 5.5A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD6N65/TMU6N65 D-PAK/I-PAK TMD6N65/TMU6N65 RoHS TMD6N65G/TMU6N65G D-PAK/I-PAK TM

 9.1. Size:160K  onsemi
 ntmd6n03r2.pdf

TMD6N65G TMD6N65G

NTMD6N03R2Power MOSFET30 V, 6 A, Dual N-Channel SOIC-8Features Designed for use in low voltage, high speed switching applications http://onsemi.com Ultra Low On-Resistance ProvidesHigher Efficiency and Extends Battery LifeVDSS RDS(ON) Typ ID Max- RDS(on) = 0.024 W, VGS = 10 V (Typ)30 V 24 mW @ VGS = 10 V 6.0 A- RDS(on) = 0.030 W, VGS = 4.5 V (Typ) Miniature SOIC-8

 9.2. Size:74K  onsemi
 ntmd6n02r2-d.pdf

TMD6N65G TMD6N65G

NTMD6N02R2Power MOSFET6.0 Amps, 20 VoltsN-Channel Enhancement ModeDual SO-8 Packagehttp://onsemi.comFeaturesVDSS RDS(ON) TYP ID MAX Ultra Low RDS(on)20 V 35 mW @ VGS = 4.5 V 6.0 A Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount PackageN-Channel Diode Exhibits High Speed, Soft RecoveryD Avalanch

 9.3. Size:78K  onsemi
 ntmd6n04r2.pdf

TMD6N65G TMD6N65G

NTMD6N04R2Power MOSFET40 V, 5.8 A, Dual N-Channel SOIC-8Features Designed for use in low voltage, high speed switching applicationshttp://onsemi.com Ultra Low On-Resistance ProvidesHigher Efficiency and Extends Battery Life - RDS(on) = 0.027 W, VGS = 10 V (Typ)VDSS RDS(ON) Typ ID Max - RDS(on) = 0.034 W, VGS = 4.5 V (Typ)40 V 27 mW @ VGS = 10 V 5.8 A Miniature S

 9.4. Size:332K  onsemi
 ntmd6n03r2g nvmd6n03r2g.pdf

TMD6N65G TMD6N65G

NTMD6N03R2,NVMD6N03R2Power MOSFET30 V, 6A, Dual N--Channel SOIC--8http://onsemi.comFeatures Designed for use in low voltage, high speed switching applicationsVDSS RDS(ON) Typ ID Max Ultra Low On--Resistance ProvidesHigher Efficiency and Extends Battery Life30 V 24 m @VGS =10V 6.0 A-- RDS(on) = 0.024 , VGS = 10 V (Typ)-- RDS(on) = 0.030 , VGS = 4.5 V (Typ)N-

 9.5. Size:440K  trinnotech
 tmd6n70.pdf

TMD6N65G TMD6N65G

TMD6N70(G)/TMU6N70(G) Features VDSS = 770 V @Tjmax Low gate charge ID = 5A 100% avalanche tested RDS(on) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD6N70/TMU6N70 D-PAK/I-PAK TMD6N70/TMU6N70 RoHS TMD6N70G/TMU6N70G D-PAK/I-PAK

 9.6. Size:429K  trinnotech
 tmd6n70g tmu6n70g tmd6n70 tmu6n70.pdf

TMD6N65G TMD6N65G

TMD6N70(G)/TMU6N70(G) Features VDSS = 770 V @Tjmax Low gate charge ID = 5A 100% avalanche tested RDS(on) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD6N70/TMU6N70 D-PAK/I-PAK TMD6N70/TMU6N70 RoHS TMD6N70G/TMU6N70G D-PAK/I-PAK

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History: 10N80AF

 

 
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