TMP4N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TMP4N80
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 123 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 21 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 77 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO-220

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TMP4N80 Datasheet (PDF)

..1. Size:612K trinnotech
tmp4n80 tmpf4n80.pdf

TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G VDSS = 880 V @Tjmax Features ID = 4A Low gate charge RDS(ON) = 3.0 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N80 TO-220 TMP4N80 RoHS TMPF4N80G TO-220F TMPF4N80G Halogen Free Absol

9.1. Size:333K trinnotech
tmp4n90 tmpf4n90.pdf

TMP4N90/TMPF4N90TMP4N90G/TMPF4N90GVDSS = 990 V @TjmaxFeaturesID = 4A Low gate chargeRDS(ON) = 4.0 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkTMP4N90 / TMPF4N90 TO-220 / TO-220F TMP4N90 / TMPF4N90 RoHSTMP4N90G / TMPF4N90G TO-220 / T

9.2. Size:571K trinnotech
tmp4n60 tmpf4n60.pdf

TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4

9.3. Size:608K trinnotech
tmp4n65az tmpf4n65az.pdf

TMP4N65AZ(G)/TMPF4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A

9.4. Size:618K trinnotech
tmp4n60az tmpf4n60az.pdf

TMP4N60AZ(G)/TMPF4N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A

9.5. Size:624K trinnotech
tmp4n65 tmpf4n65.pdf

TMP4N65(G)/TMPF4N65(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

9.6. Size:628K trinnotech
tmp4n65z tmpf4n65z.pdf

TMP4N65Z(G)/TMPF4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

9.7. Size:543K cn wuxi unigroup
tma4n60h tmu4n60h tmd4n60h tmp4n60h.pdf

TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Inf

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