All MOSFET. TMP4N80 Datasheet

 

TMP4N80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TMP4N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 123 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-220

 TMP4N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMP4N80 Datasheet (PDF)

 ..1. Size:612K  trinnotech
 tmp4n80 tmpf4n80.pdf

TMP4N80 TMP4N80

TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G VDSS = 880 V @Tjmax Features ID = 4A Low gate charge RDS(ON) = 3.0 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N80 TO-220 TMP4N80 RoHS TMPF4N80G TO-220F TMPF4N80G Halogen Free Absol

 9.1. Size:333K  trinnotech
 tmp4n90 tmpf4n90.pdf

TMP4N80 TMP4N80

TMP4N90/TMPF4N90TMP4N90G/TMPF4N90GVDSS = 990 V @TjmaxFeaturesID = 4A Low gate chargeRDS(ON) = 4.0 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkTMP4N90 / TMPF4N90 TO-220 / TO-220F TMP4N90 / TMPF4N90 RoHSTMP4N90G / TMPF4N90G TO-220 / T

 9.2. Size:571K  trinnotech
 tmp4n60 tmpf4n60.pdf

TMP4N80 TMP4N80

TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4

 9.3. Size:608K  trinnotech
 tmp4n65az tmpf4n65az.pdf

TMP4N80 TMP4N80

TMP4N65AZ(G)/TMPF4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A

 9.4. Size:618K  trinnotech
 tmp4n60az tmpf4n60az.pdf

TMP4N80 TMP4N80

TMP4N60AZ(G)/TMPF4N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A

 9.5. Size:624K  trinnotech
 tmp4n65 tmpf4n65.pdf

TMP4N80 TMP4N80

TMP4N65(G)/TMPF4N65(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

 9.6. Size:628K  trinnotech
 tmp4n65z tmpf4n65z.pdf

TMP4N80 TMP4N80

TMP4N65Z(G)/TMPF4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

 9.7. Size:543K  cn wuxi unigroup
 tma4n60h tmu4n60h tmd4n60h tmp4n60h.pdf

TMP4N80 TMP4N80

TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Inf

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: STP21N06LFI

 

 
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