IRFU410 Todos los transistores

 

IRFU410 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFU410
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 9 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm
   Paquete / Cubierta: TO251

 Búsqueda de reemplazo de MOSFET IRFU410

 

IRFU410 Datasheet (PDF)

 ..1. Size:62K  1
irfr410 irfu410.pdf

IRFU410
IRFU410

IRFR410, IRFU410Data Sheet July 1999 File Number 3372.21.5A, 500V, 7.000 Ohm, N-Channel Power FeaturesMOSFETs 1.5A, 500VThese are N-Channel enhancement mode silicon gate rDS(ON) = 7.000power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the b

 ..2. Size:62K  intersil
irfr410 irfu410.pdf

IRFU410
IRFU410

IRFR410, IRFU410Data Sheet July 1999 File Number 3372.21.5A, 500V, 7.000 Ohm, N-Channel Power FeaturesMOSFETs 1.5A, 500VThese are N-Channel enhancement mode silicon gate rDS(ON) = 7.000power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the b

 0.1. Size:330K  international rectifier
irfr4105zpbf irfu4105zpbf.pdf

IRFU410
IRFU410

PD - 95374BIRFR4105ZPbFIRFU4105ZPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 24.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 30ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

 0.2. Size:185K  international rectifier
irfu4104.pdf

IRFU410
IRFU410

PD - 94728IRFR4104AUTOMOTIVE MOSFETIRFU4104HEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 5.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 42ASDescriptionSpecifically designed for Automotive applications, this HEXFETPower MOSFET utilizes

 0.3. Size:324K  international rectifier
irfr4104pbf irfu4104pbf.pdf

IRFU410
IRFU410

PD - 95425BIRFR4104PbFIRFU4104PbFHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 40Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 5.5ml Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on

 0.4. Size:239K  international rectifier
irfr4105pbf irfu4105pbf.pdf

IRFU410
IRFU410

PD - 95550AIRFR4105PbFIRFU4105PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Surface Mount (IRFR4105)l Straight Lead (IRFU4105) DVDSS = 55Vl Fast Switchingl Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.045GDescriptionFifth Generation HEXFETs from International RectifierID = 27ASutilize advanced processing techniques to achieve thelowest possible on-r

 0.5. Size:743K  samsung
irfu410a.pdf

IRFU410
IRFU410

Advanced Power MOSFETIRFU410ABVDSS = 520 V Improved Inductive RuggednessRDS(on) = 10.0 Rugged Polysilicon Gate Cell Structure Fast Switching Times ID = 1.2 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Improved High Temperature Reliability1.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-

 0.6. Size:330K  infineon
irfr4105zpbf irfu4105zpbf.pdf

IRFU410
IRFU410

PD - 95374BIRFR4105ZPbFIRFU4105ZPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 24.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 30ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

 0.7. Size:324K  infineon
irfr4104pbf irfu4104pbf.pdf

IRFU410
IRFU410

PD - 95425BIRFR4104PbFIRFU4104PbFHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 40Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 5.5ml Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on

 0.8. Size:239K  infineon
irfr4105pbf irfu4105pbf.pdf

IRFU410
IRFU410

PD - 95550AIRFR4105PbFIRFU4105PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Surface Mount (IRFR4105)l Straight Lead (IRFU4105) DVDSS = 55Vl Fast Switchingl Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.045GDescriptionFifth Generation HEXFETs from International RectifierID = 27ASutilize advanced processing techniques to achieve thelowest possible on-r

 0.9. Size:715K  infineon
auirfr4104 auirfu4104.pdf

IRFU410
IRFU410

AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) max. 5.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D

 0.10. Size:720K  infineon
auirfr4105z auirfu4105z.pdf

IRFU410
IRFU410

AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed

 0.11. Size:246K  inchange semiconductor
irfu4105.pdf

IRFU410
IRFU410

isc N-Channel MOSFET Transistor IRFU4105FEATURESStatic drain-source on-resistance:RDS(on)45mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-Source Volt

 0.12. Size:261K  inchange semiconductor
irfu4105z.pdf

IRFU410
IRFU410

isc N-Channel MOSFET Transistor IRFU4105ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 0.13. Size:261K  inchange semiconductor
irfu4104.pdf

IRFU410
IRFU410

isc N-Channel MOSFET Transistor IRFU4104FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

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