All MOSFET. IRFU410 Datasheet

 

IRFU410 Datasheet and Replacement


   Type Designator: IRFU410
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: TO251
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IRFU410 Datasheet (PDF)

 ..1. Size:62K  1
irfr410 irfu410.pdf pdf_icon

IRFU410

IRFR410, IRFU410Data Sheet July 1999 File Number 3372.21.5A, 500V, 7.000 Ohm, N-Channel Power FeaturesMOSFETs 1.5A, 500VThese are N-Channel enhancement mode silicon gate rDS(ON) = 7.000power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the b

 ..2. Size:62K  intersil
irfr410 irfu410.pdf pdf_icon

IRFU410

IRFR410, IRFU410Data Sheet July 1999 File Number 3372.21.5A, 500V, 7.000 Ohm, N-Channel Power FeaturesMOSFETs 1.5A, 500VThese are N-Channel enhancement mode silicon gate rDS(ON) = 7.000power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the b

 0.1. Size:330K  international rectifier
irfr4105zpbf irfu4105zpbf.pdf pdf_icon

IRFU410

PD - 95374BIRFR4105ZPbFIRFU4105ZPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 24.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 30ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

 0.2. Size:185K  international rectifier
irfu4104.pdf pdf_icon

IRFU410

PD - 94728IRFR4104AUTOMOTIVE MOSFETIRFU4104HEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 5.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 42ASDescriptionSpecifically designed for Automotive applications, this HEXFETPower MOSFET utilizes

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AUIRF3710ZSTRL | IPI47N10S-33 | IRFU3709 | FS10AS-06 | IRFZ48RS | SVS60R190TD4 | WSD30L30DN

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