All MOSFET. IRFU410 Datasheet

 

IRFU410 Datasheet and Replacement


   Type Designator: IRFU410
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: TO251
 

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IRFU410 Datasheet (PDF)

 ..1. Size:62K  1
irfr410 irfu410.pdf pdf_icon

IRFU410

IRFR410, IRFU410Data Sheet July 1999 File Number 3372.21.5A, 500V, 7.000 Ohm, N-Channel Power FeaturesMOSFETs 1.5A, 500VThese are N-Channel enhancement mode silicon gate rDS(ON) = 7.000power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the b

 ..2. Size:62K  intersil
irfr410 irfu410.pdf pdf_icon

IRFU410

IRFR410, IRFU410Data Sheet July 1999 File Number 3372.21.5A, 500V, 7.000 Ohm, N-Channel Power FeaturesMOSFETs 1.5A, 500VThese are N-Channel enhancement mode silicon gate rDS(ON) = 7.000power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the b

 0.1. Size:330K  international rectifier
irfr4105zpbf irfu4105zpbf.pdf pdf_icon

IRFU410

PD - 95374BIRFR4105ZPbFIRFU4105ZPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 24.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 30ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

 0.2. Size:185K  international rectifier
irfu4104.pdf pdf_icon

IRFU410

PD - 94728IRFR4104AUTOMOTIVE MOSFETIRFU4104HEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 5.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 42ASDescriptionSpecifically designed for Automotive applications, this HEXFETPower MOSFET utilizes

Datasheet: IRFU224A , IRFU230A , IRFU310 , IRFU310A , IRFU320 , IRFU320A , IRFU3303 , IRFU3910 , IRF9640 , IRFU4105 , IRFU411 , IRFU420 , IRFU420A , IRFU5305 , IRFU5410 , IRFU5505 , IRFU6215 .

History: FDS8949F085

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