TMU5N50 Todos los transistores

 

TMU5N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TMU5N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 92.5 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 4.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 11 nC

Tiempo de elevación (tr): 32 nS

Conductancia de drenaje-sustrato (Cd): 61 pF

Resistencia drenaje-fuente RDS(on): 1.65 Ohm

Empaquetado / Estuche: I-PAK

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TMU5N50 Datasheet (PDF)

1.1. tmu5n50 tmu5n50g.pdf Size:345K _update

TMU5N50
TMU5N50

TMD5N50/TMU5N50 TMD5N50G/TMU5N50G Features VDSS = 550 V @Tjmax  Low gate charge ID = 4.5A  100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark TMD5N50/TMU5N50 D-PAK/I-PAK TMD5N50/TMU5N50 RoHS

5.1. tmu5n40zg.pdf Size:617K _update

TMU5N50
TMU5N50

TMD5N40ZG/TMU5N40ZG Features VDSS = 440 V @Tjmax  Low gate charge ID = 3.4A  100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V  Improved dv/dt capability  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark TMD5N40ZG/TMU5N40ZG D-PAK/I-PAK TMD5N40ZG/TMU5N40ZG Halogen Free Abso

5.2. tmu5n60az.pdf Size:457K _update

TMU5N50
TMU5N50

TMD5N60AZ(G)/TMU5N60AZ(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 4.2A < 2.1W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD5N60AZ / TMU5N60AZ D-PAK/I-PAK TMD5N60AZ / TMU5N60AZ RoHS TMD5N

 5.3. tmu5n60z.pdf Size:461K _update

TMU5N50
TMU5N50

TMD5N60Z(G)/TMU5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 600V 4.2A <2.1W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD5N60Z / TMU5N60Z D-PAK/I-PAK TMD5N60Z / TMU5N60Z RoHS TMD5N60ZG / TMU5N60ZG D-PAK/I-PAK TMD5

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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