All MOSFET. TMU5N50 Datasheet

 

TMU5N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: TMU5N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 92.5 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 11 nC

Rise Time (tr): 32 nS

Drain-Source Capacitance (Cd): 61 pF

Maximum Drain-Source On-State Resistance (Rds): 1.65 Ohm

Package: I-PAK

TMU5N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TMU5N50 Datasheet (PDF)

1.1. tmu5n50 tmu5n50g.pdf Size:345K _update

TMU5N50 TMU5N50

TMD5N50/TMU5N50 TMD5N50G/TMU5N50G Features VDSS = 550 V @Tjmax  Low gate charge ID = 4.5A  100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark TMD5N50/TMU5N50 D-PAK/I-PAK TMD5N50/TMU5N50 RoHS

5.1. tmu5n40zg.pdf Size:617K _update

TMU5N50 TMU5N50

TMD5N40ZG/TMU5N40ZG Features VDSS = 440 V @Tjmax  Low gate charge ID = 3.4A  100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V  Improved dv/dt capability  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark TMD5N40ZG/TMU5N40ZG D-PAK/I-PAK TMD5N40ZG/TMU5N40ZG Halogen Free Abso

5.2. tmu5n60az.pdf Size:457K _update

TMU5N50 TMU5N50

TMD5N60AZ(G)/TMU5N60AZ(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 4.2A < 2.1W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD5N60AZ / TMU5N60AZ D-PAK/I-PAK TMD5N60AZ / TMU5N60AZ RoHS TMD5N

 5.3. tmu5n60z.pdf Size:461K _update

TMU5N50 TMU5N50

TMD5N60Z(G)/TMU5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 600V 4.2A <2.1W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD5N60Z / TMU5N60Z D-PAK/I-PAK TMD5N60Z / TMU5N60Z RoHS TMD5N60ZG / TMU5N60ZG D-PAK/I-PAK TMD5

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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