All MOSFET. TMU5N50 Datasheet

 

TMU5N50 Datasheet and Replacement


   Type Designator: TMU5N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 92.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 11 nC
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.65 Ohm
   Package: I-PAK
 
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TMU5N50 Datasheet (PDF)

 ..1. Size:345K  trinnotech
 tmd5n50 tmd5n50g tmu5n50 tmu5n50g.pdf pdf_icon

TMU5N50

TMD5N50/TMU5N50TMD5N50G/TMU5N50GFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DI-PAKD-PAKGSDevice Package Marking RemarkTMD5N50/TMU5N50 D-PAK/I-PAK TMD5N50/TMU5N50 RoHS

 9.1. Size:461K  trinnotech
 tmd5n60z tmu5n60z.pdf pdf_icon

TMU5N50

TMD5N60Z(G)/TMU5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 4.2A

 9.2. Size:457K  trinnotech
 tmd5n60az tmu5n60az.pdf pdf_icon

TMU5N50

TMD5N60AZ(G)/TMU5N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A

 9.3. Size:617K  trinnotech
 tmd5n40zg tmu5n40zg.pdf pdf_icon

TMU5N50

TMD5N40ZG/TMU5N40ZG Features VDSS = 440 V @Tjmax Low gate charge ID = 3.4A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability Halogen free package JEDEC Qualification Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark TMD5N40ZG/TMU5N40ZG D-PAK/I-PAK TMD5N40ZG/TMU5N40ZG Halogen Free Abso

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Keywords - TMU5N50 MOSFET datasheet

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