FMP05N50E Todos los transistores

 

FMP05N50E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FMP05N50E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 66 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO-220AB
 

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FMP05N50E Datasheet (PDF)

 ..1. Size:424K  fuji
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FMP05N50E

FMP05N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 8.1. Size:507K  fuji
fmp05n60e.pdf pdf_icon

FMP05N50E

FMP05N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Otros transistores... IRF1405ZL-7PPBF , IRF1405ZLPBF , IRF1405ZPBF , IRF1405ZS-7PPBF , IRF1405ZSPBF , IRF1407PBF , IRF140SMD , FMP03N60E , IRLB3034 , FMP05N60E , FMP06N60E , FMP06N60ES , FMP07N50E , FMP08N50E , FMP10N60E , FMP11N60E , FMP12N50E .

History: FML13N60ES | STL7N80K5

 

 
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History: FML13N60ES | STL7N80K5

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