FMP05N50E MOSFET Datasheet: N-Ch, 500V, 5A. Full specification with pinout and replacement list

FMP05N50E Specs and Replacement

Type Designator: FMP05N50E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 66 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-220AB

FMP05N50E substitution

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FMP05N50E datasheet

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FMP05N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) ... See More ⇒

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fmp05n60e.pdf pdf_icon

FMP05N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) ... See More ⇒

Detailed specifications: IRF1405ZL-7PPBF , IRF1405ZLPBF , IRF1405ZPBF , IRF1405ZS-7PPBF , IRF1405ZSPBF , IRF1407PBF , IRF140SMD , FMP03N60E , IRLB3034 , FMP05N60E , FMP06N60E , FMP06N60ES , FMP07N50E , FMP08N50E , FMP10N60E , FMP11N60E , FMP12N50E .