FMP12N50ES Todos los transistores

 

FMP12N50ES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FMP12N50ES
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO-220AB
 

 Búsqueda de reemplazo de FMP12N50ES MOSFET

   - Selección ⓘ de transistores por parámetros

 

FMP12N50ES Datasheet (PDF)

 ..1. Size:478K  fuji
 fmp12n50es.pdf pdf_icon

FMP12N50ES

FMP12N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.70.5V

 5.1. Size:444K  fuji
 fmp12n50e.pdf pdf_icon

FMP12N50ES

FMP12N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 8.1. Size:523K  fuji
 fmp12n60es.pdf pdf_icon

FMP12N50ES

FMP12N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V

Otros transistores... FMP05N60E , FMP06N60E , FMP06N60ES , FMP07N50E , FMP08N50E , FMP10N60E , FMP11N60E , FMP12N50E , AO3407 , FMP12N60ES , FMP13N60E , FMP13N60ES , FMP16N50E , FMP16N50ES , FMP16N60E , FMP16N60ES , FMP20N50E .

History: MMQ60R115PCTH | AOT264L | JCS16N25VC | JCS2N95RA | UF840KL-TQ2-R | AOT2610L | SRT15N050HS2

 

 
Back to Top

 


 
.