FMP12N50ES Datasheet and Replacement
Type Designator: FMP12N50ES
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-220AB
FMP12N50ES substitution
FMP12N50ES Datasheet (PDF)
fmp12n50es.pdf

FMP12N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.70.5V
fmp12n50e.pdf

FMP12N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
fmp12n60es.pdf

FMP12N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V
Datasheet: FMP05N60E , FMP06N60E , FMP06N60ES , FMP07N50E , FMP08N50E , FMP10N60E , FMP11N60E , FMP12N50E , AO3407 , FMP12N60ES , FMP13N60E , FMP13N60ES , FMP16N50E , FMP16N50ES , FMP16N60E , FMP16N60ES , FMP20N50E .
History: STL100N6LF6 | PMXB40UNE
Keywords - FMP12N50ES MOSFET datasheet
FMP12N50ES cross reference
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History: STL100N6LF6 | PMXB40UNE



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