FMP13N60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FMP13N60E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 225 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.58 Ohm

Encapsulados: TO-220AB

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FMP13N60E datasheet

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FMP13N60E

FMP13N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)

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FMP13N60E

FMP13N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5

Otros transistores... FMP06N60ES, FMP07N50E, FMP08N50E, FMP10N60E, FMP11N60E, FMP12N50E, FMP12N50ES, FMP12N60ES, IRFP064N, FMP13N60ES, FMP16N50E, FMP16N50ES, FMP16N60E, FMP16N60ES, FMP20N50E, FMP20N50ES, FMP20N60S1