All MOSFET. FMP13N60E Datasheet

 

FMP13N60E Datasheet and Replacement


   Type Designator: FMP13N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO-220AB
 

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FMP13N60E Datasheet (PDF)

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FMP13N60E

FMP13N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

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FMP13N60E

FMP13N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5

Datasheet: FMP06N60ES , FMP07N50E , FMP08N50E , FMP10N60E , FMP11N60E , FMP12N50E , FMP12N50ES , FMP12N60ES , 5N50 , FMP13N60ES , FMP16N50E , FMP16N50ES , FMP16N60E , FMP16N60ES , FMP20N50E , FMP20N50ES , FMP20N60S1 .

History: SE720 | PDC3803R | IRF8113GPBF | APM2317A | SVSP11N60SD2TR | HAT2206C | VBMB165R18

Keywords - FMP13N60E MOSFET datasheet

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