2SJ197 Todos los transistores

 ..1. Size:301K  nec
 2sj197.pdf

 ..2. Size:1281K  kexin
 2sj197.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ197 1.70 0.1 Features VDS (V) =-60V ID =-1.5 A 0.42 0.1 0.46 0.1 RDS(ON) 1 (VGS =-10V) RDS(ON) 1.5 (VGS =-4V) Comp;ementary to 2SK1483 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20 Continuou

 ..3. Size:1483K  cn vbsemi
 2sj197.pdf

2SJ197 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.058 at VGS = - 10 V - 6.5 APPLICATIONS - 60 30 nC 0.065 at VGS = - 4.5 V - 5.5 Load Switch S D G D G D S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Lim

 9.1. Size:123K  sanyo
 2sj193.pdf

Ordering number EN3766 P-Channel Silicon MOSFET 2SJ193 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ193] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter

 9.2. Size:89K  sanyo
 2sj191.pdf

Ordering number EN3764A P-Channel Silicon MOSFET 2SJ191 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ191] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SJ191] 6.5 2.3 5.0 0.5 4 0.5 0

 9.3. Size:93K  sanyo
 2sj190.pdf

Ordering number EN3763 P-Channel Silicon MOSFET 2SJ190 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ190] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter

 9.4. Size:118K  sanyo
 2sj192.pdf

Ordering number EN3765 P-Channel Silicon MOSFET 2SJ192 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ192] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SJ192] 6.5 2.3 5.0 0.5 4 0.5 0.

 9.5. Size:122K  sanyo
 2sj195.pdf

Ordering number EN3768A P-Channel Silicon MOSFET 2SJ195 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ195] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SJ195] 6.5 2.3 5.0 0.5 4 0.5 0

 9.6. Size:117K  sanyo
 2sj194.pdf

Ordering number EN3767 P-Channel Silicon MOSFET 2SJ194 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ194] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SJ194] 6.5 2.3 5.0 0.5 4 0.5 0.

 9.7. Size:343K  nec
 2sj198.pdf

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 2sj199.pdf

 9.9. Size:386K  nec
 2sj196.pdf

 9.10. Size:1320K  kexin
 2sj199.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ199 1.70 0.1 Features VDS (V) =-100V ID =-1 A (VGS =-10V) 0.42 0.1 0.46 0.1 RDS(ON) 2 (VGS =-10V) RDS(ON) 2.5 (VGS =-4V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS 20 Continuous Drain Current ID

 9.11. Size:830K  cn vbsemi
 2sj191.pdf

2SJ191 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbol