All MOSFET. 2SJ197 Datasheet

 

2SJ197 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SJ197
   Marking Code: PB
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.2 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: SC62

 2SJ197 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ197 Datasheet (PDF)

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 2sj197.pdf

2SJ197 2SJ197

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 2sj197.pdf

2SJ197 2SJ197

SMD Type MOSFETP-Channel MOSFET2SJ1971.70 0.1 Features VDS (V) =-60V ID =-1.5 A0.42 0.10.46 0.1 RDS(ON) 1 (VGS =-10V) RDS(ON) 1.5 (VGS =-4V) Comp;ementary to 2SK14831.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20 Continuou

 ..3. Size:1483K  cn vbsemi
 2sj197.pdf

2SJ197 2SJ197

2SJ197www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.058 at VGS = - 10 V - 6.5APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 5.5 Load SwitchSDGDG D SP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Lim

 9.1. Size:123K  sanyo
 2sj193.pdf

2SJ197 2SJ197

Ordering number:EN3766P-Channel Silicon MOSFET2SJ193Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ193]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter

 9.2. Size:89K  sanyo
 2sj191.pdf

2SJ197 2SJ197

Ordering number:EN3764AP-Channel Silicon MOSFET2SJ191Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ191]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SJ191]6.5 2.35.0 0.540.50

 9.3. Size:93K  sanyo
 2sj190.pdf

2SJ197 2SJ197

Ordering number:EN3763P-Channel Silicon MOSFET2SJ190Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ190]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter

 9.4. Size:118K  sanyo
 2sj192.pdf

2SJ197 2SJ197

Ordering number:EN3765P-Channel Silicon MOSFET2SJ192Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ192]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SJ192]6.5 2.35.0 0.540.50.

 9.5. Size:122K  sanyo
 2sj195.pdf

2SJ197 2SJ197

Ordering number:EN3768AP-Channel Silicon MOSFET2SJ195Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ195]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SJ195]6.5 2.35.0 0.540.50

 9.6. Size:117K  sanyo
 2sj194.pdf

2SJ197 2SJ197

Ordering number:EN3767P-Channel Silicon MOSFET2SJ194Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ194]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SJ194]6.5 2.35.0 0.540.50.

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 2sj198.pdf

2SJ197 2SJ197

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 2sj199.pdf

2SJ197 2SJ197

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 2sj196.pdf

2SJ197 2SJ197

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 2sj199.pdf

2SJ197 2SJ197

SMD Type MOSFETP-Channel MOSFET2SJ1991.70 0.1 Features VDS (V) =-100V ID =-1 A (VGS =-10V)0.42 0.10.46 0.1 RDS(ON) 2 (VGS =-10V) RDS(ON) 2.5 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -100V Gate-Source Voltage VGS 20 Continuous Drain Current ID

 9.11. Size:830K  cn vbsemi
 2sj191.pdf

2SJ197 2SJ197

2SJ191www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol

Datasheet: 2SJ165 , 2SJ166 , 2SJ178 , 2SJ179 , 2SJ180 , 2SJ184 , 2SJ185 , 2SJ196 , IRF1407 , 2SJ198 , 2SJ199 , 2SJ202 , 2SJ203 , 2SJ204 , 2SJ205 , 2SJ206 , 2SJ207 .

 

 
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