2SJ197 Datasheet. Specs and Replacement
Type Designator: 2SJ197 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: SC62
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2SJ197 substitution
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2SJ197 datasheet
2sj197.pdf
SMD Type MOSFET P-Channel MOSFET 2SJ197 1.70 0.1 Features VDS (V) =-60V ID =-1.5 A 0.42 0.1 0.46 0.1 RDS(ON) 1 (VGS =-10V) RDS(ON) 1.5 (VGS =-4V) Comp;ementary to 2SK1483 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20 Continuou... See More ⇒
2sj197.pdf
2SJ197 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.058 at VGS = - 10 V - 6.5 APPLICATIONS - 60 30 nC 0.065 at VGS = - 4.5 V - 5.5 Load Switch S D G D G D S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Lim... See More ⇒
2sj193.pdf
Ordering number EN3766 P-Channel Silicon MOSFET 2SJ193 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ193] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter ... See More ⇒
Detailed specifications: 2SJ165, 2SJ166, 2SJ178, 2SJ179, 2SJ180, 2SJ184, 2SJ185, 2SJ196, STP75NF75, 2SJ198, 2SJ199, 2SJ202, 2SJ203, 2SJ204, 2SJ205, 2SJ206, 2SJ207
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