FMP16N60ES MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FMP16N60ES

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 270 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 41 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.47 Ohm

Encapsulados: TO-220AB

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FMP16N60ES datasheet

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 fmp16n60es.pdf pdf_icon

FMP16N60ES

FMP16N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V

 5.1. Size:468K  fuji
 fmp16n60e.pdf pdf_icon

FMP16N60ES

FMP16N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)

 8.1. Size:414K  fuji
 fmp16n50e.pdf pdf_icon

FMP16N60ES

FMP16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)

 8.2. Size:477K  fuji
 fmp16n50es.pdf pdf_icon

FMP16N60ES

FMP16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V

MOSTRAR MÁS

Otros transistores... FMP12N50E, FMP12N50ES, FMP12N60ES, FMP13N60E, FMP13N60ES, FMP16N50E, FMP16N50ES, FMP16N60E, IRF740, FMP20N50E, FMP20N50ES, FMP20N60S1, FMP30N60S1, FMP76-010T, FMR09N90E, FMR11N90E, FMR17N60ES