FMP16N60ES - Даташиты. Аналоги. Основные параметры
Наименование производителя: FMP16N60ES
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 270 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 41 ns
Cossⓘ - Выходная емкость: 230 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.47 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для FMP16N60ES
FMP16N60ES Datasheet (PDF)
fmp16n60es.pdf
FMP16N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V
fmp16n60e.pdf
FMP16N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
fmp16n50e.pdf
FMP16N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
fmp16n50es.pdf
FMP16N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V
Другие MOSFET... FMP12N50E , FMP12N50ES , FMP12N60ES , FMP13N60E , FMP13N60ES , FMP16N50E , FMP16N50ES , FMP16N60E , IRF740 , FMP20N50E , FMP20N50ES , FMP20N60S1 , FMP30N60S1 , FMP76-010T , FMR09N90E , FMR11N90E , FMR17N60ES .
History: IXKC19N60C5 | QM2504W
History: IXKC19N60C5 | QM2504W
Список транзисторов
Обновления
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