FMR19N60ES Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FMR19N60ES  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 19 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.365 Ohm

Encapsulados: TO-3PF

  📄📄 Copiar 

 Búsqueda de reemplazo de FMR19N60ES MOSFET

- Selecciónⓘ de transistores por parámetros

 

FMR19N60ES datasheet

 ..1. Size:512K  fuji
 fmr19n60es.pdf pdf_icon

FMR19N60ES

FMR19N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V)

 ..2. Size:211K  inchange semiconductor
 fmr19n60es.pdf pdf_icon

FMR19N60ES

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FMR19N60ES FEATURES With TO-3PML packaging Maintains both low power loss andlow noise Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC-DC converters Uninterruptible p

 5.1. Size:493K  fuji
 fmr19n60e.pdf pdf_icon

FMR19N60ES

FMR19N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) H

Otros transistores... FMP20N50ES, FMP20N60S1, FMP30N60S1, FMP76-010T, FMR09N90E, FMR11N90E, FMR17N60ES, FMR19N60E, IRLZ44N, FMR21N50ES, FMR23N50ES, FMR23N60E, FMR23N60ES, FMR28N50E, FMR28N50ES, FMV03N60E, FMV05N50E