All MOSFET. FMR19N60ES Datasheet

 

FMR19N60ES Datasheet and Replacement


   Type Designator: FMR19N60ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.365 Ohm
   Package: TO-3PF
 

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FMR19N60ES Datasheet (PDF)

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FMR19N60ES

FMR19N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3PFLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V)

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FMR19N60ES

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMR19N60ESFEATURESWith TO-3PML packagingMaintains both low power loss andlow noiseVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible p

 5.1. Size:493K  fuji
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FMR19N60ES

FMR19N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3PFLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)H

Datasheet: FMP20N50ES , FMP20N60S1 , FMP30N60S1 , FMP76-010T , FMR09N90E , FMR11N90E , FMR17N60ES , FMR19N60E , IRFP260N , FMR21N50ES , FMR23N50ES , FMR23N60E , FMR23N60ES , FMR28N50E , FMR28N50ES , FMV03N60E , FMV05N50E .

History: TMP7N65Z

Keywords - FMR19N60ES MOSFET datasheet

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