FMR23N50ES Todos los transistores

 

FMR23N50ES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FMR23N50ES
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 330 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.245 Ohm
   Paquete / Cubierta: TO-3PF
 

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FMR23N50ES Datasheet (PDF)

 ..1. Size:496K  fuji
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FMR23N50ES

FMR23N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3PFLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V)

 5.1. Size:435K  fuji
fmr23n50e.pdf pdf_icon

FMR23N50ES

FMR23N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3PFLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)H

 8.1. Size:516K  fuji
fmr23n60e.pdf pdf_icon

FMR23N50ES

FMR23N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3PFLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)H

 8.2. Size:517K  fuji
fmr23n60es.pdf pdf_icon

FMR23N50ES

FMR23N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3PFLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V)

Otros transistores... FMP30N60S1 , FMP76-010T , FMR09N90E , FMR11N90E , FMR17N60ES , FMR19N60E , FMR19N60ES , FMR21N50ES , IRF630 , FMR23N60E , FMR23N60ES , FMR28N50E , FMR28N50ES , FMV03N60E , FMV05N50E , FMV05N60E , FMV06N60E .

History: AM30N03-40D | PMN230ENE | VBZE30N03 | AFN501DEA | 2SK3481 | AP9962AGJ-HF | IPB029N06N3G

 

 
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