FMR23N50ES. Аналоги и основные параметры

Наименование производителя: FMR23N50ES

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 130 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 36 ns

Cossⓘ - Выходная емкость: 330 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.245 Ohm

Тип корпуса: TO-3PF

Аналог (замена) для FMR23N50ES

- подборⓘ MOSFET транзистора по параметрам

 

FMR23N50ES даташит

 ..1. Size:496K  fuji
 fmr23n50es.pdf pdf_icon

FMR23N50ES

FMR23N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V)

 5.1. Size:435K  fuji
 fmr23n50e.pdf pdf_icon

FMR23N50ES

FMR23N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) H

 8.1. Size:516K  fuji
 fmr23n60e.pdf pdf_icon

FMR23N50ES

FMR23N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) H

 8.2. Size:517K  fuji
 fmr23n60es.pdf pdf_icon

FMR23N50ES

FMR23N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V)

ПОКАЗАТЬ ЕЩЁ

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